Point defects, aliovalent doping, and Kröger–Vink notation
Reading: Woodward, Karen, Evans, and Vogt, Solid State Materials Chemistry Ch. 2 §§2.1–2.6; Ch. 3 §3.1
Intrinsic Defects: Learning Objectives
By the end of this lecture, you should be able to:
Why defects existExplain why real crystals always contain defects, even under equilibrium conditions.
The defect typesIdentify and describe the major intrinsic point defects: vacancies, interstitials, substitutions (intrinsic site-mixing), Schottky defects, Frenkel defects, and color centers.
Configurational entropyUnderstand how configurational entropy drives the presence of defects in crystals.
Defects and propertiesRelate defects to important material properties (optical, electronic, mechanical).
Defects Put to Work
gemstones
Phosphors
Computer chips
Steel and other alloys
Superconductors
Point Defects
Vacancy
Interstitial
Substitution
Per Solid State Materials Chemistry, §2.1.
Intrinsic Point Defects in Ionic Compounds
Schottky
Frenkel
SchottkyCation vacancy + anion vacancy — paired, so the crystal keeps its charge balance
FrenkelVacancy + interstitial of the same element — the ion leaves its normal site and occupies an interstitial
Color centerElectron trapped on an anion vacancy
Per Solid State Materials Chemistry, §2.2.
Color Centers
Fluorite, CaF2
Amethyst, SiO2
An electron trapped in the anion vacancy, surrounded by Ca2+: the F-center that colors the crystal.
Amethyst is purple quartz colored by Fe³⁺ impurities, not a color-center example. Per Solid State Materials Chemistry, §2.2.
Thermodynamics of Defect Formation
$\Omega = 1,\ S = \ln\Omega = 0$
$\Omega = \dfrac{(N_0+n)!}{N_0!\,n!}$
Defect formation increases the configurational entropy of a crystal
$\Delta G = \Delta H - T\Delta S$
$\Delta G = n(\Delta H - T\Delta S_{vib}) - kT\ln\Omega$
Charge balanceExplain how aliovalent doping stays neutral: excess positive charge → anion interstitials or cation vacancies; a deficit of positive charge → cation interstitials or anion vacancies.
Why doping mattersDescribe yttria-stabilized zirconia (an oxide ion conductor), semiconductors (donor/electron versus acceptor/hole doping), and transition metal oxides (variable oxidation states, batteries, superconductivity, magnetoresistance).
Kröger–Vink notationInterpret it to describe defect types, sites, and charges.
Extrinsic Defects (Doping)
Isovalentthe substituting ion carries the same charge as the ion it replaces, as Cr3+ does for Al3+ and Nd3+ for Y3+
Aliovalentthe substituting ion carries a different charge, so charge neutrality always triggers a compensating change elsewhere in the crystal
Ruby Al2−xCrxO3
Emerald Be2Al2−xCrxSi6O18
Nd-YAG laser Y3−xNdxAl5O12
Per Solid State Materials Chemistry, §2.4.
Aliovalent Doping: Higher-Charge Cation
A cation of higher charge leaves the crystal with excess positive charge, and if no ion is allowed to change its oxidation state there are two ways to compensate it.
Mechanism
Substitution
Result
Anion interstitials
CaF2Y3+ for Ca2+⟶Ca1−xYxF2+x
Ca1−xYxF2+x, extra F− in interstitial sites
Cation vacancies
NaClCa2+ for Na+⟶Na1−2xCax□xCl
Na1−2xCax□xCl, one Na+ vacancy per Ca2+ added
□ = vacancy
Per Solid State Materials Chemistry, §2.4.
Aliovalent Doping: Lower-Charge Cation
A cation of lower charge leaves the crystal with excess negative charge, and again with every oxidation state fixed there are two ways to compensate it.
Mechanism
Substitution
Result
Cation interstitials
SiO2Al3+ for Si4+⟶LixSi1−xAlxO2
LixSi1−xAlxO2, extra Li+ in interstitial sites
Anion vacancies
ZrO2Y3+ for Zr4+⟶Zr1−xYxO2−x/2□x/2
Zr1−xYxO2−x/2□x/2, one O2− vacancy per two Y3+
□ = vacancy
Per Solid State Materials Chemistry, §2.4.
Aliovalent Semiconductor Doping
Donor (electron) dopingthe substituting atom has more valence electrons than the host, as P does for Si; equivalent to reducing the lattice
Acceptor (hole) dopingthe substituting atom has fewer valence electrons than the host, as B does for Si; equivalent to oxidizing the lattice
Per Solid State Materials Chemistry, §2.4.
Controlling Oxidation State: Oxidation
Compounds of the transition metals are very sensitive to the oxidation state of the cation, so doping that raises it is a way of controlling the properties.
Mechanism
Substitution
Oxidation state
Cation vacancies
LiCoO2remove Li+⟶Li1−xCoO2
Co+3 → Co+(3+x)
Anion interstitials
La2CuO4add O2−⟶La2CuO4+x
Cu+2 → Cu+(2+2x)
Aliovalent doping with a lower-valent cation
La2CuO4Sr2+ for La3+⟶La2−xSrxCuO4
Cu+2 → Cu+(2+x)
Per Solid State Materials Chemistry, §2.4.
Controlling Oxidation State: Reduction
Compounds of the transition metals are very sensitive to the oxidation state of the cation, so doping that lowers it is a way of controlling the properties.
Mechanism
Substitution
Oxidation state
Cation interstitials
TiS2insert Li+⟶LixTiS2
Ti+4 → Ti+(4−x)
Anion vacancies
WO3remove O2−⟶WO3−x
W+6 → W+(6−2x)
Aliovalent doping with a higher-valent cation
CaMnO3La3+ for Ca2+⟶Ca1−xLaxMnO3
Mn+4 → Mn+(4−x)
Per Solid State Materials Chemistry, §2.4.
Kröger–Vink Notation
One symbol names an extrinsic defect in three parts: what the defect is, where it sits, and the charge it carries relative to the host site.
$\mathrm{A}^{C}_{B}$
the defect species, v for a vacancyeffective charge, in dots and primesthe site in the crystal, i interstitial, s surface
•charge +1
′charge −1
••charge +2
″charge −2
•••charge +3
‴charge −3
×charge 0
Per Solid State Materials Chemistry, §2.6.
Kröger–Vink Examples: Oxidation
Mechanism
Reaction
Kröger–Vink symbol
Cation vacancies
LiCoO2Remove Li+⟶Li1−xCoO2
$v'_{\mathrm{Li}}$
Anion interstitials
La2CuO4Add O2−⟶La2CuO4+x
$\mathrm{O}''_{i}$
Aliovalent doping with a lower-valent cation
La2CuO4Sub. Sr2+ for La3+⟶La2−xSrxCuO4
$\mathrm{Sr}'_{\mathrm{La}}$
Per Solid State Materials Chemistry, §2.6.
Kröger–Vink Examples: Reduction
Mechanism
Reaction
Kröger–Vink symbol
Cation interstitials
TiS2Insert Li+⟶LixTiS2
$\mathrm{Li}^{\bullet}_{i}$
Anion vacancies
WO3Remove O2−⟶WO3−x
$v^{\bullet\bullet}_{\mathrm{O}}$
Aliovalent doping with a higher-valent cation
CaMnO3Sub. La3+ for Ca2+⟶Ca1−xLaxMnO3
$\mathrm{La}^{\bullet}_{\mathrm{Ca}}$
Per Solid State Materials Chemistry, §2.6.
Donor Doping in Silicon
P core: one extra proton, +1 relative to Si
P's extra electron on the dashed orbit, −1
host lattice atom (Si)
Relative to Si, P brings one extra proton (+1) and one extra electron (−1)
Bound, low T: electron in a hydrogen-like orbit, whole center neutral. The +1 and −1 cancel: $\mathrm{P}^{\times}_{\mathrm{Si}}$, where × means zero effective charge
Ionized: electron free, nothing cancels the extra proton, so the site is +1: $\mathrm{P}^{\bullet}_{\mathrm{Si}}$, plus the free electron $e'$
$\mathrm{P}^{\times}_{\mathrm{Si}} \rightarrow \mathrm{P}^{\bullet}_{\mathrm{Si}} + e'$: charge balances, about 45 meV in Si
Per Solid State Materials Chemistry, §3.1.
Extrinsic Defects: Summary
Extrinsic defects arise from putting foreign atoms into a lattice, and whatever charge they carry, the crystal has to compensate.
Substitution
Compensation
Key examples
Isovalent
None needed: no net charge imbalance.
Ruby and emerald coloration, YAG lasers.
Aliovalent, compensated by defects
Interstitials or vacancies on the sublattice that restores neutrality.
Y-stabilized ZrO2 for oxygen conduction, semiconductor doping (n-type, p-type).
Aliovalent, compensated by redox
A transition metal changes oxidation state instead.
Kröger–Vink notationA systematic language for defect chemistry: the defect species, the site it sits on, and its effective charge.
Practice questions
Work the Lecture 8 practice questions
before the next class. They cover equilibrium vacancy concentrations in metals, Schottky defect
counts in ionic solids, oxidation states in mixed-valent oxides, and Kröger–Vink
notation for point defects.